V23990-K204-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 13
FWD
Figure 14
FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
2,5
2
Qrr
Tj = Tjmax -25°C
Tj = Tjmax -25°C
Qrr
2
1,6
1,2
0,8
0,4
1,5
1
Qrr
Tj = 25°C
Tj = 25°C
Qrr
0,5
0
0
0
I C (A)
R g on ( Ω)
150
0
10
20
30
40
25
50
75
100
125
At
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
°C
V
°C
25/125
300
15
25/125
300
20
=
=
V
A
V
V
Rgon
=
VGE =
32
ꢀ
15
Figure 15
FWD
Figure 16
FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
15
15
Tj = Tjmax -25°C
12
9
12
Tj = Tjmax - 25°C
Tj = 25°C
IRRM
IRRM
Tj = 25°C
IRRM
9
IRRM
6
6
3
0
3
0
0
I C (A)
R gon ( Ω )
150
25
50
75
100
125
0
10
20
30
40
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
°C
V
°C
25/125
300
15
25/125
300
20
=
=
V
A
V
V
Rgon
=
VGE =
32
ꢀ
15
copyright Vincotech
7
Revision: 3