V23990-K201-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 17
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 18
D1,D2,D3,D4,D5,D6,D7 FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
600
800
dI0/dt
dI0/dt
µ
µ
µ
µ
dIrec/dt
dIrec/dt
500
400
300
200
100
0
600
400
200
0
0
I
C (A)
R gon ( Ω )
270
0
2
4
6
8
10
90
180
At
At
Tj =
VCE
VGE
Tj =
°C
V
°C
V
A
V
25/125
300
15
25/125
=
=
VR =
IF =
300
6
V
Rgon
=
VGE =
64
ꢀ
15
Figure 19
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 20
D1,D2,D3,D4,D5,D6,D7 FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-2
10-5
10-4
10-3
10-2
10-1
100
1011
t p (s)
t p (s)
10-4
10-3
10-2
10-1
100
1011
At
At
tp / T
2,40
tp / T
3,00
D =
D =
RthJH
=
RthJH =
K/W
K/W
IGBT thermal model values
FWD thermal model values
R (K/W)
0,08
Tau (s)
9,7E+00
4,8E-01
7,5E-02
1,5E-02
2,9E-03
3,0E-04
R (K/W)
0,17
Tau (s)
1,2E+00
1,1E-01
2,6E-02
4,6E-03
8,4E-04
0,18
0,87
0,82
0,95
0,59
0,56
0,43
0,50
0,30
copyright Vincotech
8
Revision: 3
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