F206R6A150SB
target datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
VCE [V] or
IF [A] or
ID [A]
Tj
Min
Max
VGS [V]
VDS [V]
Blocking Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1.19
1.16
0.9
0.79
3
1.9
V
VF
Vto
rt
Forward voltage
150
150
150
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
V
mΩ
4
0.05
mA
1.1
Ir
1600
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
RthJC
Thermal resistance chip to heatsink per chip
Thermal resistance chip to heatsink per chip
0.57
0.38
K/W
Inverter Transistor
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5.8
6.5
V
VGE(th) VCE=VGE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
0.0024
150
1.44
1.64
2.1
V
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
0.5
mA
600
0
1400
nA
20
none
Ω
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
Rise time
ns
td(off)
tf
Turn-off delay time
Rgoff=8 Ω
Rgon=8 Ω
±15
300
150
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
RthJH
RthJC
9240
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
576
Reverse transfer capacitance
Gate charge
274
±15
480
150
940
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
0.46
0.30
K/W
Inverter Diode
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1.42
1.29
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
2.1
V
VF
IRRM
trr
Diode forward voltage
50
50
Peak reverse recovery current
Reverse recovery time
A
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Rgon=8 Ω
±15
300
μC
di(rec)max
/dt
A/μs
mWs
Erec
RthJH
RthJC
Thermal grease
thickness≤50um
λ = 1 W/mK
1.12
0.74
K/W
copyright by Vincotech
3
Revision: 3
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