欢迎访问ic37.com |
会员登录 免费注册
发布采购

10-FZ12NMA080SH-M269F 参数 Datasheet PDF下载

10-FZ12NMA080SH-M269F图片预览
型号: 10-FZ12NMA080SH-M269F
PDF下载: 下载PDF文件 查看货源
内容描述: [Mixed voltage component topology]
分类和应用:
文件页数/大小: 26 页 / 3036 K
品牌: VINCOTECH [ VINCOTECH ]
 浏览型号10-FZ12NMA080SH-M269F的Datasheet PDF文件第3页浏览型号10-FZ12NMA080SH-M269F的Datasheet PDF文件第4页浏览型号10-FZ12NMA080SH-M269F的Datasheet PDF文件第5页浏览型号10-FZ12NMA080SH-M269F的Datasheet PDF文件第6页浏览型号10-FZ12NMA080SH-M269F的Datasheet PDF文件第8页浏览型号10-FZ12NMA080SH-M269F的Datasheet PDF文件第9页浏览型号10-FZ12NMA080SH-M269F的Datasheet PDF文件第10页浏览型号10-FZ12NMA080SH-M269F的Datasheet PDF文件第11页  
10-FZ12NMA080SH-M269F  
datasheet  
Buck  
half bridge IGBT and neutral point FRED  
Figure 9  
IGBT  
Figure 10  
IGBT  
Typical switching times as a  
function of collector current  
t = f(IC)  
Typical switching times as a  
function of gate resistor  
t = f(RG)  
1,00  
0,10  
0,01  
0,00  
1,00  
0,10  
0,01  
0,00  
tdoff  
tdon  
tdoff  
tdon  
tf  
tr  
tf  
tr  
I C (A)  
R G (W)  
0
20  
40  
60  
80  
0
8
16  
24  
32  
40  
With an inductive load at  
With an inductive load at  
Tj =  
VCE  
VGE  
Tj =  
VCE  
VGE  
IC =  
125  
350  
±15  
2
°C  
V
125  
350  
±15  
40  
°C  
V
V
A
=
=
=
=
V
Rgon  
Rgoff  
=
=
2
Figure 11  
FRED  
Figure 12  
FRED  
Typical reverse recovery time as a  
function of collector current  
trr = f(Ic)  
Typical reverse recovery time as a  
function of IGBT turn on gate resistor  
trr = f(Rgon  
)
0,04  
0,03  
0,02  
0,01  
0
0,12  
trr High T  
0,1  
0,08  
0,06  
0,04  
0,02  
trr High T  
trr Low T  
trr Low T  
0
0
I C (A)  
R gon (W)  
0
20  
40  
60  
80  
8
16  
24  
32  
40  
At  
At  
Tj =  
VCE  
VGE  
Tj =  
25/125  
350  
±15  
2
°C  
V
25/125  
350  
°C  
V
A
V
=
=
VR =  
IF =  
V
40  
Rgon  
=
VGE =  
±15  
copyright by Vincotech  
7
Revision: 4