FZ12 / F0122PA150SC
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
V
CE [V] or
DS [V]
Tj
Min
Max
V
GS [V]
V
Inverter Transistor
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
2,4
VGE(th) VCE=VGE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
0,006
150
V
V
1,4
1,98
2,43
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
0,05
700
1200
0
mA
nA
Ω
20
5
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
185
204
28,2
37,2
305
387
79
116
8,89
14,15
9,11
14,92
Rise time
ns
td(off)
tf
Turn-off delay time
Rgoff=2 Ω
Rgon=2 Ω
±15
600
150
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
RthJH
RthJC
9300
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
580
Reverse transfer capacitance
Gate charge
510
±15
960
150
579
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
0,553
K/W
Inverter Diode
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1
1,91
1,91
183,3
209,5
127
2,4
VF
IRRM
trr
Diode forward voltage
150
150
V
A
Peak reverse recovery current
Reverse recovery time
ns
298
13,9
26,6
3265
2538
5,21
10,45
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Rgon=2 Ω
±15
600
μC
di(rec)max
/dt
A/μs
mWs
Erec
RthJH
RthJC
Thermal grease
thickness≤50um
λ = 1 W/mK
0,90
K/W
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3
Revision: 1
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