10-FZ062TA030(FB/FB01/FB02/FB03)-P983(D18/D28/D38/D48)
10-F0062TA030(FB/FB03)-P983(D19/D49)
preliminary datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
PFC IGBT
VCE
IC
ICpulse
Ptot
Collector-emitter break down voltage
DC collector current
600
19
V
A
Th=80°C
Tc=80°C
Tj=Tjmax
90
57
tp limited by Tjmax
Tj=Tjmax
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Maximum Junction Temperature
A
Th=80°C
Tc=80°C
W
V
VGE
+/- 20
150
Tjmax
°C
C.T. Inverse diode
VRRM
IF
IFRM
Ptot
Tj=25°C
Peak Repetitive Reverse Voltage
DC forward current
600
8
V
A
Th=80°C
Tc=80°C
Tj=Tjmax
16
14
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
A
Th=80°C
Tc=80°C
W
°C
Tjmax
175
PFC Diode
VRRM
IF
IFRM
Ptot
Tj=25°C
Peak Repetitive Reverse Voltage
DC forward current
600
20
V
A
Th=80°C
Tc=80°C
Tj=Tjmax
40
31
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation
A
Th=80°C
Tc=80°C
W
°C
Tjmax
Maximum Junction Temperature
600
PFC Shunt
IF
Tc=25°C
Tc=25°C
DC forward current
Power dissipation per Shunt
31,6
10
A
Ptot
W
DC link Capacitor
VMAX
Tc=25°C
Max.DC voltage
500
V
Thermal Properties
Tstg
Top
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
-40…+(Tjmax - 25)
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Vis
t=2s
DC voltage
4000
V
min 12,7
mm
mm
17 mm housing
12 mm housing
min 12,7
min 8,89
Copyright by Vincotech
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Revision: 3
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