欢迎访问ic37.com |
会员登录 免费注册
发布采购

MMBT4403 参数 Datasheet PDF下载

MMBT4403图片预览
型号: MMBT4403
PDF下载: 下载PDF文件 查看货源
内容描述: 小信号晶体管( PNP ) [Small Signal Transistor (PNP)]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 36 K
品牌: VAISH [ VAISHALI SEMICONDUCTOR ]
 浏览型号MMBT4403的Datasheet PDF文件第2页浏览型号MMBT4403的Datasheet PDF文件第3页  
MMBT4403
New Product
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistor (PNP)
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
3
.056 (1.43
)
.052 (1.33
)
Top View
Mounting Pad Layout
0.031 (0.8)
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
1
2
max. .004 (0.1)
0.035 (0.9)
0.079 (2.0)
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
.045 (1.15)
.037 (0.95)
0.037 (0.95)
0.037 (0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Features
• PNP Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
• As complementary type, the NPN transistor
MMBT4401 is recommended.
• This transistor is also available in the TO-92 case
with the type designation 2N4403.
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Marking Code:
2T
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum Ratings & Thermal Characteristics
Parameters
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
(1)
Power Dissipation
(2)
T
A
= 25°C
Derate above 25°C
T
A
= 25°C
Derate above 25°C
Symbols
–V
CBO
–V
CEO
–V
EBO
–I
C
P
tot
P
tot
R
θJA
T
j
T
S
Value
40
40
5.0
600
225
1.8
300
2.4
556
(1)
417
(2)
150
–55 to +150
Units
V
V
V
mA
mW
mW/°C
mW
mW/°C
°C/W
°C
°C
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
Notes:
(1) FR-5 Board = 1.0 x 0.75 x 0.062 in.
(2) Alumina Substrate = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Document Number 88227
10-May-02
www.vishay.com
1