2SC5658M3T5G
NPN Silicon General
Purpose Amplifier Transistor
This NPN transistor is designed for general purpose amplifier
applications. This device is housed in the SOT-723 package which is
designed for low power surface mount applications, where board
space is at a premium.
•
Reduces Board Space
•
High h
FE
, 210 −460 (typical)
•
Low V
CE(sat)
, < 0.5 V
•
ESD Performance: Human Body Model;
u
2000 V,
Machine Model;
u
200 V
•
Available in 8 mm, 7-inch/3000 Unit Tape and Reel
•
This is a Pb−Free Device
http://onsemi.com
NPN GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
COLLECTOR
3
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current − Continuous
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
Value
50
50
5.0
100
Unit
Vdc
Vdc
Vdc
mAdc
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Rating
Power Dissipation (Note 1)
Junction Temperature
Storage Temperature Range
Symbol
P
D
T
J
T
stg
Max
260
150
−55 ~ + 150
Unit
mW
°C
°C
1
2
3
MARKING
DIAGRAM
SOT−723
CASE 631AA
XX M
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
XX = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
2SC5658M3T5G
Package
SOT−723
Shipping
†
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2004
1
February, 2004 − Rev. 0
Publication Order Number:
2SC5658M3/D
VAISH [ VAISHALI SEMICONDUCTOR ]
