SUBMINIATURE
PHOTOINTERRUPTER
Description
The MIR-3305-P consists of a Gallium Arsenide in-
frared emitting diode and a NPN silicon phototran-
sistor built in a black plastic housing. It is a refl-
ective subminiature photointerrupter.
MIR-3305-P
Package Dimensions
Unit: mm
Features
Compact and thin
MIR-3305-P : Compact DIP, long lead type
Optimum detecting distance : 0.8 - 1.0 mm
TOP VIE W
Wavelength : 940nm
E mitter
D
C
Collector
Visible light cut-off type
Flat lead type
Anode
A
B
Ca thode
NOTE:
(1).Tolerance:±0.2mm
(2). ( ) Reference dimensions
Absolute Maximum Ratings
@ T
A
=25 C
Parameter
Continuous Forward Current
INPUT
Reverse Voltage
Power Dissipation
Collector-emitter breakdown voltage
OUTPUT Emitter-Collector breakdown voltage
Collector power dissipation
Total power dissipation
Operating Temperature Range
Storage Temperature Range
Symbol
I
F
V
R
P
ad
V
(BR)CEO
V
(BR)ECO
P
C
P
TOT
T
opr
T
stg
30
5
75
100
-25
o
C
to + 85
o
C
-40
o
C
to + 100
o
C
Minimum Rating Maximum Rating
50
5
75
Unit
mA
V
mW
V
V
mW
mW
o
Lead Soldering Temperature (within 5 sec, minimum 1.6mm from body) at 260
o
C
Unity Opto Technology Co., Ltd.
12/10/2002
UOT [ UNITY OPTO TECHNOLOGY ]
