GaAlAs HIGH POWER T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-544L3 is an infrared emitting diode in GaAlAs
on GaAlAs technology molded in water clear plastic package.
7.62
(.300)
MIE-544L3
Unit : mm (inches )
Package Dimensions
φ5.05
(.200)
5.47
(.215)
5.90
(.230)
1.00
(.040)
FLAT DENOTES CATHODE
Features
l
23.40 MIN.
(.920)
0.50 TYP.
(.020)
High radiant power and high radiant intesity
Suitable for DC and high pulse current operation
Standard T-1 3/4 (φ 5mm) package
Peak wavelength
λ
P
=880 nm
Good spectral matching to Si-Photodetecto
Radiant angle : 40°
A
2.54
(.100)
1.00MIN
(.040)
l
l
l
l
C
l
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
'@ T
A
=25
o
C
Parameter
Power Dissipation
Peak Forward Current(300pps,10µs pulse)
Continuos Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
120
1
100
5
-55 C to +100 C
o
o
-55 C to +100 C
o
o
Unit
mW
A
mA
V
260
o
C for 5 seconds
Unity Opto Technology Co., Ltd.
11/17/2000
UOT [ UNITY OPTO TECHNOLOGY ]
