AlGaAs/GaAs T-1 PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-384A4 is an infrared emitting diode utilizing
GaAs with AlGaAs window coating chip technology.
It is molded in water clear plastic package.
4.6±0.30
(.181)
3.1±0.20
(.122)
MIE-384A4
Unit : mm (inches )
Package Dimensions
5.7
5.7
2.5
(.224)
2.5
(.10)
SEE NOTE 2
Features
l
l
l
l
l
l
23.40MIN.
(.920)
High radiant power and high radiant intensity
Suitable for DC and high pulse current operation
Special T-1 (
φ
3mm ) package
Peak wavelength
λ
p
= 940 nm
Good spectral matching to si-photodetector
Radiant angle : ±14°
A
2.54
(.100)
C
.50 TYP.
(.020)
1.00MIN.
(.040)
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 0.4 mm (.0157") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ T
A
=25 C
Parameter
Power Dissipation
Peak Forward Current
Continuous Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
120
1
100
5
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Unit
mW
A
mA
V
o
Unity Opto Technology Co., Ltd.
02/04/2002
UOT [ UNITY OPTO TECHNOLOGY ]
