GaAlAs/GaAs 1.8mm PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-184A4 is a high power infrared eimtting
diode in GaAs technology with AlGaAs window
coating molded in water clear plastic package.
R 1.70
(.067)
φ1.80
(.071)
2.40
(.094)
MIE-184A4
Package Dimensions
Unit : mm (inches )
3.30
(.130)
1.40
(.055)
1.60
(.063)
Features
l
l
l
l
l
3.00
(.118)
High radiant power and high radiant intensity
Suitable for DC and high pulse current operation
Special 1.8mm package, radiation angle: 35°
Peak wavelength
λp
= 940 nm
Good spectral matching to Si-Photodetector
0.50 TYP.
(.020)
SEE NOTE 2
25.40MIN.
(1.000)
1.00MIN
.
Application
A
l
l
2.54 NOM.
(.100)
SEE NOTE 3
C
Data communication
SIR
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 0.4 mm (.015") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Power Dissipation
Peak Forward Current(300pps,10µs pulse)
Continuous Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
100
1
100
5
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Unit
mW
A
mA
V
Unity Opto Technology Co., Ltd.
02/04/2002
UOT [ UNITY OPTO TECHNOLOGY ]
