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MID-52A22 参数 Datasheet PDF下载

MID-52A22图片预览
型号: MID-52A22
PDF下载: 下载PDF文件 查看货源
内容描述: T-1 3/4封装的NPN PHOTOTRANSISOR [T-1 3/4 PACKAGE NPN PHOTOTRANSISOR]
分类和应用:
文件页数/大小: 2 页 / 34 K
品牌: UOT [ UNITY OPTO TECHNOLOGY ]
 浏览型号MID-52A22的Datasheet PDF文件第1页  
MID-52A22  
Optical-Electrical Characteristics  
@ TA=25oC  
Unit  
Parameter  
Collector-Emitter  
Breakdown Voltage  
Emitter-Collector  
Breakdown Voltage  
Collector-Emitter  
Saturation Voltage  
Rise Time  
Test Conditions  
Symbol  
Min.  
30  
Typ .  
Max.  
Ic=0.1mA  
Ee=0  
V(BR)CEO  
V
V
Ie=0.1mA  
Ee=0  
V(BR)ECO  
5
Ic=0.5mA  
Ee=0.1mW/cm2  
Vcc =5V , RL=1KW  
IC=1mA  
VCE(SAT)  
0.4  
V
Tr  
Tf  
15  
15  
mS  
nA  
mA  
Fall Time  
VCE=10V  
Ee=0  
Collector Dark  
Current  
ICEO  
100  
VCE=5V  
Ee=0.1mW/cm2  
On State Collector  
Current  
IC(ON)  
0.8  
Typical Optical-Electrical Characteristic Curves  
1000  
100  
10  
4.0  
Vce = 5  
V
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
Ee = 0.1 mW/cm2  
@l = 940 nm  
1
0.1  
0.01  
0.001  
0
40  
80  
120  
-75  
-25  
25  
75  
125  
TA - Ambient Temperature -oC  
FIG.1 COLLECTOR DARK CURRENT  
VS AMBIENT TEMPERATURE  
200  
TA - Ambient Temperature -oC  
FIG.2 NORMALIZED COLLECTOR CURRENT  
VS AMBIENT TEMPERATURE  
5
Vcc =  
5
1
V
Vce = 5 V  
VRL  
F
=
V
160  
120  
80  
4
= 100 Hz  
PW = 1 ms  
3
2
1
0
40  
0
0
2
4
6
8
10  
0
0.1 0.2 0.3 0.4 0.5 0.6  
Ee - Irradiance - mW/cm2  
FIG.4 RELATIVE COLLECTOR CURRENT  
VS IRRADIANCE  
RL - Load Resistance - KW  
FIG.3 RISE AND FALL TIME  
VS LOAD RESISTANCE  
0° 10° 20°  
30°  
40°  
1.0  
0.9  
50°  
60°  
70°  
80°  
90°  
0.8  
0.5 0.3 0.1 0.2 0.4 0.6  
FIG .5 SENSITIVITY DIAGRAM  
Unity Opto Technology Co., Ltd.  
02/04/2002