MID-32H22
Optical-Electrical Characteristics
@ TA=25oC
Unit
Test Conditions
Parameter
Collector-Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector-Emitter
Saturation Voltage
Rise Time
Symbol
Min.
30
Typ.
Max.
Ic=0.1mA
V(BR)CEO
V
V
Ee=0
Ie=0.1mA
Ee=0
Ic=0.5mA
Ee=0.1mW/cm2
VCC =5V, RL=1KW
IC=1mA
V(BR)ECO
VCE(SAT)
5
0.4
V
Tr
Tf
15
15
mS
nA
mA
Fall Time
VCE=10V
Collector Dark
Current
ICEO
100
Ee=0
VCE=5V
Ee=0.1mW/cm2
On State Collector
Current
IC(ON)
0.4
Typical Optical-Electrical Characteristic Curves
1000
100
10
4.0
Vce = 5
Ee = 0.1 mW/cm2
V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
@l = 940 nm
1
0.1
0.01
0.001
0
40
80
120
-75
-25
25
75
125
TA - Ambient Temperature -oC
FIG.1 COLLECTOR DARK CURRENT
VS AMBIENT TEMPERATURE
200
TA - Ambient Temperature -oC
FIG.2 NORMALIZED COLLECTOR CURRENT
VS AMBIENT TEMPERATURE
10
Vce = 5 V
8
Vcc =
5
V
VRL
=
1
V
160
120
80
F
= 100 Hz
6
4
2
0
PW = 1 ms
40
0
0
2
4
6
8
10
0
0.1 0.2 0.3 0.4 0.5 0.6
Ee - Irradiance - mW/cm2
RL - Load Resistance - KW
FIG.3 RISE AND FALL TIME
VS LOAD RESISTANCE
FIG.4 RELATIVE COLLECTOR CURRENT
VS IRRADIANCE
0° 10° 20°
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0%
30°
40°
1.0
0.9
50°
60°
70°
80
0.8
90°
0.5 0.3 0.1 0.2 0.4 0.6
600
700
800
900 1000
Wavelength-nm
FIG.5 RELATIVE SPECTRAL SENSITIVITY
VS. WAVELENGTH
FIG.6 SENSITIVITY DIAGRAM
Unity Opto Technology Co., Ltd.
02/04/2002
UOT [ UNITY OPTO TECHNOLOGY ]
