US3008
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
Conditions
VGS=0V , ID=250uA
Min.
30
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1.0
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Typ.
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Max.
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Unit
V
BVDSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃, ID=1mA
VGS=10V , ID=4A
0.023
27
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V/℃
33
RDS(ON)
Static Drain-Source On-Resistance2
mΩ
VGS=4.5V , ID=3A
36
50
VGS(th)
Gate Threshold Voltage
1.5
-4.2
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2.5
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V
VGS=VDS , ID =250uA
△VGS(th)
V
GS(th) Temperature Coefficient
mV/℃
VDS=24V , VGS=0V , TJ=25℃
VDS=24V , VGS=0V , TJ=55℃
1
IDSS
Drain-Source Leakage Current
uA
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5
VGS=±20V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
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±100
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nA
S
VDS=5V , ID=4A
7
Rg
VDS=0V , VGS=0V , f=1MHz
2.3
4.9
1.6
2.0
2
4.6
6.9
2.2
2.8
4
Ω
Qg
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
VDS=15V , VGS=4.5V , ID=4A
nC
ns
Qgs
Qgd
Td(on)
Tr
VDD=15V , VGS=10V , RG=3.3Ω
34.4
13.2
4.8
416
62
62
ID=4A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
26
9.6
582
87
Ciss
Coss
Crss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
51
71
Diode Characteristics
Symbol
Parameter
Conditions
Min.
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Typ.
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Max.
4.6
18.4
1.2
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Unit
A
IS
ISM
VSD
trr
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
VG=VD=0V , Force Current
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A
VGS=0V , IS=1A , TJ=25℃
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V
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8.7
2.3
nS
nC
IF =4A , dI/dt=100A/µs , TJ=25℃
Qrr
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Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2