US2403
P-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
Conditions
VGS=0V , ID=-250uA
Reference to 25℃, ID=-1mA
GS=-4.5V , ID=-3A
Min.
-20
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-0.3
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Typ.
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Max.
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Unit
V
BVDSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
-0.016
44
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V/℃
V
55
RDS(ON)
Static Drain-Source On-Resistance2
mΩ
VGS=-2.5V , ID=-2A
VGS=-1.8V , ID=-1A
56
70
73
85
VGS(th)
Gate Threshold Voltage
-0.5
3.97
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-1.0
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V
VGS=VDS , ID =-250uA
△VGS(th)
V
GS(th) Temperature Coefficient
mV/℃
VDS=-16V , VGS=0V , TJ=25℃
VDS=-16V , VGS=0V , TJ=55℃
-1
IDSS
Drain-Source Leakage Current
uA
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-5
VGS=±8V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
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±100
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nA
S
VDS=-5V , ID=-3A
14
Qg
12.1
1.5
3.1
4.4
45
16.9
2.1
VDS=-15V , VGS=-4.5V , ID=-3A
nC
Qgs
Qgd
Td(on)
Tr
4.3
Turn-On Delay Time
Rise Time
8.8
VDD=-10V , VGS=-4.5V ,
81
ns
Td(off)
Tf
Turn-Off Delay Time
Fall Time
RG=3.3Ω, ID=-3A
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48.4
30.4
938
108
96
97
60.8
1313
151
134
Ciss
Coss
Crss
Input Capacitance
VDS=-15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Diode Characteristics
Symbol
Parameter
Conditions
Min.
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Typ.
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Max.
-3.6
-14.4
-1
Unit
A
IS
ISM
VSD
trr
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
VG=VD=0V , Force Current
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A
VGS=0V , IS=-1A , TJ=25℃
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V
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28
9
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nS
nC
IF=-3A , dI/dt=100A/µs , TJ=25℃
Qrr
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Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UNITPOWER [ ShenZhen XinDeYi Electronics Co., Ltd. ]
