UM3303
N-Ch and P-Ch Fast Switching MOSFETs
P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
Conditions
VGS=0V , ID=-250uA
Min.
-30
---
---
Typ.
---
Max.
---
Unit
V
BVDSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃, ID=-1mA
VGS=-10V , ID=-4A
-0.02
50
---
V/℃
62
100
-2.5
---
RDS(ON)
Static Drain-Source On-Resistance2
mΩ
VGS=-4.5V , ID=-2A
---
85
VGS(th)
Gate Threshold Voltage
-1.0
---
---
---
---
---
---
---
---
---
---
---
-1.5
4.32
---
V
VGS=VDS , ID =-250uA
△VGS(th)
V
GS(th) Temperature Coefficient
mV/℃
VDS=-24V , VGS=0V , TJ=25℃
VDS=-24V , VGS=0V , TJ=55℃
-1
IDSS
Drain-Source Leakage Current
uA
---
-5
VGS=±20V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
---
±100
---
nA
S
VDS=-5V , ID=-3A
5.5
24
Rg
VDS=0V , VGS=0V , f=1MHz
48
---
Ω
Qg
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
5.22
1.25
2.3
18.4
11.4
39.4
5.2
463
82
VDS=-20V , VGS=-4.5V , ID=-5A
nC
ns
Qgs
Qgd
Td(on)
Tr
---
---
---
VDD=-15V , VGS=-10V , RG=3.3Ω
---
ID=-1A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
---
---
---
---
---
---
---
Ciss
Coss
Crss
Input Capacitance
---
VDS=-15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
---
68
---
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy5
6
---
---
mJ
VDD=25V , L=0.1mH , IAS=6A
Diode Characteristics
Symbol
Parameter
Conditions
Min.
---
Typ.
---
Max.
-5
Unit
A
IS
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
VG=VD=0V , Force Current
ISM
VSD
---
---
-10
-1
A
VGS=0V , IS=-1A , TJ=25℃
---
---
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-15A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
3
UNITPOWER [ ShenZhen XinDeYi Electronics Co., Ltd. ]
