UM3302
N-Ch and P-Ch Fast Switching MOSFETs
N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
Conditions
VGS=0V , ID=250uA
Min.
30
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1.0
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Typ.
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Max.
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Unit
V
BVDSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃, ID=1mA
VGS=10V , ID=10A
0.027
8.5
12
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V/℃
10.5
15
RDS(ON)
Static Drain-Source On-Resistance2
mΩ
VGS=4.5V , ID=8A
VGS(th)
Gate Threshold Voltage
1.5
-5.8
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2.5
V
VGS=VDS , ID =250uA
△VGS(th)
V
GS(th) Temperature Coefficient
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mV/℃
VDS=24V , VGS=0V , TJ=25℃
VDS=24V , VGS=0V , TJ=55℃
1
IDSS
Drain-Source Leakage Current
uA
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5
VGS=±20V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
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±100
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nA
S
VDS=5V , ID=10A
5.8
2.2
12.5
4.4
5
Rg
VDS=0V , VGS=0V , f=1MHz
4.4
Ω
Qg
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
17.5
6.2
VDS=15V , VGS=4.5V , ID=10A
nC
ns
Qgs
Qgd
Td(on)
Tr
7.0
6.2
59
12.4
106
55
VDD=15V , VGS=10V , RG=3.3Ω
ID=10A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
27.6
8.4
1317
163
131
16.8
1845
228.2
183.4
Ciss
Coss
Crss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy5
45
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mJ
VDD=25V , L=0.1mH , IAS=20A
Diode Characteristics
Symbol
Parameter
Conditions
Min.
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Typ.
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Max.
9.5
40
Unit
A
IS
ISM
VSD
trr
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
VG=VD=0V , Force Current
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A
VGS=0V , IS=1A , TJ=25℃
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1.2
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V
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12.5
5
nS
nC
IF=10A , dI/dt=100A/µs , TJ=25℃
Qrr
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Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=35A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UNITPOWER [ ShenZhen XinDeYi Electronics Co., Ltd. ]
