UM0016
N-Ch 100V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
Conditions
VGS=0V , ID=250uA
Min.
100
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1.0
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Typ.
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Max.
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Unit
V
BVDSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃, ID=1mA
VGS=10V , ID=3A
0.098
38
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V/℃
47
RDS(ON)
Static Drain-Source On-Resistance2
mΩ
VGS=4.5V , ID=2A
40
50
VGS(th)
Gate Threshold Voltage
1.5
-5.52
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2.5
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V
VGS=VDS , ID =250uA
△VGS(th)
V
GS(th) Temperature Coefficient
mV/℃
VDS=80V , VGS=0V , TJ=25℃
VDS=80V , VGS=0V , TJ=55℃
10
IDSS
Drain-Source Leakage Current
uA
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100
±100
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VGS=±20V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
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nA
S
VDS=5V , ID=3A
6.2
1.6
60
Rg
VDS=0V , VGS=0V , f=1MHz
3.2
Ω
Qg
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
84
13
VDS=80V , VGS=10V , ID=3A
nC
ns
Qgs
Qgd
Td(on)
Tr
9.2
9.9
10.8
27
14
21.6
48.6
112
48
VDD=50V , VGS=10V , RG=3.3Ω
ID=3A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
56
24
Ciss
Coss
Crss
Input Capacitance
3848
137
82
5387
192
115
VDS=15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy5
13.4
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mJ
VDD=25V , L=0.1mH , IAS=15A
Diode Characteristics
Symbol
Parameter
Conditions
Min.
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Typ.
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Max.
3.6
15
Unit
A
IS
ISM
VSD
trr
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
VG=VD=0V , Force Current
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A
VGS=0V , IS=1A , TJ=25℃
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1.2
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V
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25
29
nS
nC
IF=3A , dI/dt=100A/µs , TJ=25℃
Qrr
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Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=27A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UNITPOWER [ ShenZhen XinDeYi Electronics Co., Ltd. ]
