7.5-30GHz Frequency Multiplier
MUX-PO9824
Electrical Characteristics
These values are representative on wafer measurements that are made without bonding
wires at the RF ports.
Tamb=+25°C, Vd=3.5V Vg1=Vg2=-0.9V Vg3 adjusted fo r Id=75mA under RF Pin=+12dBm
Symbol
Fin
Parameter
Input frequency range
Min
6.25
25
Typ
Max
8.25
33
Unit
GHz
GHz
dBm
dBm
dBm
Fout
Pin
Output frequency range
Input power
12
11
0
Pout 4xFin Output power for +12 dBm input power
8
14
2
Pout 1xFin Fin level at the output ( 6.25 < Fin < 8.25GHz ),
for +12dBm input power
Pout 2xFin 2Fin level at the output ( 12.5 < 2Fin < 16.5GHz
), for +12dBm input power
-10
0
3
dBm
dBm
dBm
Pout 3xFin 3Fin level at the output ( 18.75 < 3Fin <
24.75GHz ), for +12dBm input power
12
Pout 5xFin 5Fin level at the output ( 31.25 < 5Fin <
41.25GHz ), for +12dBm input power
0
VSWRin Input VSWR
2.5:1
2.5:1
75
VSWRout Output VSWR
Id
Bias current
mA
A wire bond of typically 0.1 to 0.15 nH will improve the input and output matching.
Absolute Maximum Ratings
Tamb=+25°C
Symbol
Vd
Parameter
Values
4.0
Unit
Supply voltage
Supply current
Input power
V
mA
dBm
°C
Id
150
Pin
20
Ta
Operating temperature range
Storage temperature range
-40 to +85
-55 to +125
Tstg
°C
(1) Operation of device above anyone of these parameters may cause permanent damage.
Ref. : DSMUX-P098247117 - 27 Apr 07
2/6
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
