50W C Band HPA
CHZ050A-SEA
Absolute Maximum Ratings
Tcase= +25°C(1), (2), (3)
Symbol
VDS
Parameter
Rating
Unit
V
Note
Drain-Source Voltage
60
(6)
VGS_Q
IG_MAX
IG_MIN
ID_MAX
PIN
Gate-Source Voltage
-10, +2
V
Maximum Gate Current in forward mode
Maximum Gate Current in reverse mode
Maximum Drain Current
96
mA
mA
A
-16
(4)
(5)
5
Maximum Input Power (typical)
Maximum pulse width
41
5
dBm
ms
%
Pw_MAX
DC_MAX
Tj
Maximum duty cycle
50
Junction Temperature
220
°C
°C
°C
TSTG
Storage Temperature
-55 to +150
See note
(4)
TCase
Case Operating Temperature
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) Duration < 1s.
(3) The given values must not be exceeded at the same time even momentarily for any
parameter, since each parameter is independent from each other, otherwise deterioration or
destruction of the device may take place.
(4) Max junction temperature must be considered
(5) Within 5.2-5.8GHz - Linked to and limited by IG_MAX & IG_MIN values
(6)
V
GS_Q
max limited by ID_MAX and IG_MAX values
Ref. : DSCHZ050A-SEA4176 - 25 jun 14
3/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
