CHZ050A-SEA
50W C Band HPA
Recommended Operating Ratings
Tcase= +25°C
Symbol
VDS
Parameter
Min
Typ
Max Unit
Conditions
Drain to Source Voltage
Gate to Source Voltage
Quiescent Drain Current
Drain Current
20
50
V
V
A
A
VGS_Q
ID_Q
-1.9
0.4
3
VD=50V, ID_Q=400mA
1.3
VD=50V
(1)
ID_MAX
VD=50V,
Compressed mode
IG_MAX
Gate Current (forward
mode)
0
32
mA Compressed mode
Tj_MAX
Pw
Junction temperature
Maximum pulse width
Maximum duty cycle
200
0.5
10
°C
ms
DC
%
MTTF=10e6
(1) Limited by dissipated power
DC Characteristics
Tcase= +25°C
Symbol
VP
Parameter
Min
Typ
-2
10 (1)
Max
Unit
V
Conditions
Pinch-Off Voltage
-3
-1
VD=50V, ID= IDSS /100
VD=7V, VG=2V
ID_SAT
IG_leak
Saturated Drain Current
Gate Leakage Current
(reverse mode)
A
-4
mA
VD=50V, VG=-7V
VBDS
Drain-Source
200
V
VG=-7V, ID=20mA
Break-down Voltage
RTH
Thermal Resistance
2.5
°C/W CW
RTH0.5ms Thermal Resistance
1.45
°C/W Duty cycle = 10%
Pulse width =0,5ms
(1) For information, limited by ID_MAX , see on Absolute Maximum Ratings
RF Characteristics (Pulsed)
Tcase= +25°C, Pulse mode (1), F = 5.5GHz, VDS=50V, ID_Q=200mA
Symbol
GSS
Parameter
Small Signal Gain
Min
13
Typ
15
Max
Unit
dB
W
PSAT
Saturated Output Power
50
60
PAE
Max Power Added Efficiency
40
45
%
GPAE_MAX Associated Gain at Max PAE
12
dB
dB
S11 Input matching
-10
(1)
Input RF and gate voltage are pulsed. Conditions are 25µs width, 10% duty cycle and
1µs offset between RF and DC pulse.
These values are the intrinsic performance of the packaged device. They are deduced from
measurements and simulations. They are considered in the reference plans defined by the
leads of the package, at the connection interface with the PCB.
Ref. : DSCHZ050A-SEA4176 - 25 jun 14
2/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
