24-24.5GHz Tx Multifunction
CHV2421-QDG
Device thermal performances
All the figures given in this section are obtained assuming that the QFN device is cooled
down only by conduction through the package thermal pad (no convection mode
considered).
The temperature is monitored at the package back-side interface (Tcase) as shown below.
The system maximum temperature must be adjusted in order to guarantee that Tcase
remains below than the maximum value specified in the next table. So, the system PCB must
be designed to comply with this requirement.
A derating must be applied on the dissipated power if the Tcase temperature can not be
maintained below than the maximum temperature specified (see the curve Pdiss. Max) in
order to guarantee the nominal device life time (MTTF).
DEVICE THERMAL SPECIFICATION :
(1)
Recommended max. junction temperature (Tj max)
Junction temperature absolute maximum rating
:
:
:
150 °C
175 °C
2,4 W
Max. continuous dissipated power @ Tcase=
105
105
°C
°C
(2)
=>
Pdiss derating above Tcase =
:
:
:
:
:
:
:
47 mW/°C
<21 °C/W
-40 °C
Junction-Case thermal resistance (Rth J-C)(3)
(4)
Minimum Tcase operatingtemperature
(4)(5)
Maximum Tcase operating temperature
105 °C
(4)(5)
Absolute maximum rating Tcase temperature
Minimum storage temperature
125 °C
-55 °C
150 °C
Maximum storage temperature
(1) Typical supply voltage considered @ Tcase=105°C.
(2) Derating at junction temperature constant = Tj max
hottest junction
(3) Rth J -C is calculated for a worst case where the
supplied.
of the MMIC is considered, and all component biasing are
(4) Tcase=Package back side temperature measured under the die-attach-pad (see the drawing below).
(5) Typical supply voltage considered 5V
temperature
Ref. : CHV2421-QDG2201- 19 Jul 12
5/12
Specifications subject to change without notice
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