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CHV2270 参数 Datasheet PDF下载

CHV2270图片预览
型号: CHV2270
PDF下载: 下载PDF文件 查看货源
内容描述: 完全集成的Ku波段HBT VCO的低成本/高线性度 [Fully Integrated Ku-band HBT VCO Low cost / High linearity]
分类和应用:
文件页数/大小: 8 页 / 259 K
品牌: UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
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Ku-band HBT VCO  
CHV2270  
Typical Assembly and Bias Configuration  
Prescaler line  
>= 47pF  
GND  
>= 47pF  
DC line  
+V  
>= 47pF  
>= 47pF  
L_out  
µ-strip line  
This drawing shows an example of assembly and bias configuration. All the transistors are internally  
self-biased. Some external chip capacitors of at least 47pF are necessary for the positive supply  
voltage. Pads to be power supplied are (VD1 xor VD2) and (VA1 xor VA2).  
Prescaler outputs PRES4 and PRES64 must be AC coupled through an external serial capacitor  
taking into account output frequency and internal impedance of 100(Typically >120pF).  
SET4 and SET64 longer bonding length to DC ground than 10mm must be compensated by  
intermediate decoupling capacitor (Typically >120pF). Setting is done by DC load only.  
For the RF pad the equivalent wire bonding inductance (diameter=25µm) have to be according to the  
following recommendation:  
Pin name  
Equivalent inductance  
Wire length (1)  
RF  
L_out < 0.3 nH  
< 0.4 mm  
(1) This value is the total length including the necessary loop from pad to pad.  
Chip backside must be RF grounded.  
Ref.: DSCHV22707117 -27 Apr 07  
6/8  
Specifications subject to change without notice  
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE  
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09