K-band Oscillator / Q-band Mixer
CHV2241
Typical Assembly and Bias Configuration
4
3
µ-strip line
5
µ-strip line
2
6
L_erc
L_rf
1
7
13 12 11 10
9
8
>= 120pF
>= 120pF
+V
-V
IF
DC and control lines
This drawing shows an example of assembly and bias configuration. All the
transistors are internally self biased. The positive and negative voltages can be
respectively connected together (see drawing) according to the recommended
values given in the electrical characteristics table.
For the RF pads the equivalent wire bonding inductances (diameter=25µm) have
to be according to the following recommendation.
Port
Equivalent inductance
(nH)
Approximative wire
length (mm)
ERC (2)
LO_OUT_AUX (4)
Optional
L_erc = 0.4
Not critical , < 1nH
0.5
RF (6)
L_rf = 0.28
0.35
For a micro-strip configuration a hole in the substrate is recommended for chip
assembly.
Ref. : DSCHV22411074 -15-Mar.-01
5/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
