CHR3762-QDG
5.5-9GHz Integrated Down Converter
Device thermal performances
All the figures given in this section are obtained assuming that the QFN device is cooled
down only by conduction through the package thermal pad (no convection mode considered).
The temperature is monitored at the package back-side interface (Tcase) as shown below.
The system maximum temperature must be adjusted in order to guarantee that Tcase
remains below the maximum value specified in the next table. So, the PCB system must be
designed to comply with this requirement.
A derating must be applied on the dissipated power if the Tcase temperature can not be
maintained below the maximum temperature specified (see the curve Pdiss. Max) in order to
guarantee the nominal device life time (MTTF).
DEVICE THERMAL SPECIFICATION : CHR3762-QDG
Recommended max. junction temperature (Tj max)
Junction temperature absolute maximum rating
Max. continuous dissipated power (Pdiss. Max.)
:
:
:
131 °C
175 °C
0,3 W
=> Pdiss. Max. derating above Tcase(1)= 85
Junction-Case thermal resistance (Rth J-C)(2)
Minimum Tcase operating temperature(3)
°C
:
:
:
5 mW/°C
<183 °C/W
-40 °C
Maximum Tcase operating temperature(3)
Minimum storage temperature
:
:
:
85 °C
-55 °C
150 °C
Maximum storage temperature
(1) Derating at junction temperature constant = Tj max.
(2) Rth J-C is calculated for a worst case considering the hottest junction of the MMIC and all the devices biased.
(3) Tcase=Package back side temperature measured under the die-attach-pad (see the drawing below).
0,3
Tcase
0,25
0,2
0,15
0,1
0,05
0
Example: QFN 16L 3x3
Location of temeprature
reference point(Tcase)
on package's bottom side
Pdiss. Max. @Tj <Tj max (W)
-50
-25
0
25
50
75
100
125
150
Tcase (°C)
6.1
Ref. : DSCHR3762-QDG2335 - 30 Nov 12
4/16
Specifications subject to change without notice
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Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
