17–24 GHz Down Converter
CHR3663-QEG
Electrical Characteristics
Tamb = +25°C, VD=VDL= 4.5V
Symbol
Parameter
Min
Typ
Max
Unit
FRF
RF frequency range
17
24.0
GHz
FLO
FIF
LO frequency range
7
14.0
3.5
GHz
GHz
dB
IF frequency range
DC
Gc
Conversion gain@ min. attenuation (1)
Gain control range
11
15
dB
∆G
NF
Noise Figure@ min. attenuation
Image rejection (1)
3.5
15
dB
Im_rej
PLO
dBc
dBm
dBm
dBm
V
LO Input power
0
IIP3
2LO/RF
3
Input IP3@ all gain range (∆G)
2LO leakage at RF port @ max. gain
-40
4.5
380
-0.4
VD, VDL DC drain voltage
Id
Drain current
mA
V
VGL
LNA DC gate voltage
GC2, GC3 Gain control DC voltage
VGM Mixer DC gate voltage
-2
+0,6
V
-0.7
V
These values are representative of onboard measurements as defined on the drawing at page 15
(paragprah “Evaluation mother board”).
(1) An external combiner 90°is required on I / Q.
Note : Id not affected by GC2, GC3.
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Parameter
Values
Unit
Vd
Id
Maximum drain bias voltage
5
V
mA
V
Maximum drain bias current
LNA DC gate voltage
450
VGL
-2.0 to +0.4
-2.0 to +0.4
-2.5 to + 0.8
10
VGM
GC1, GC2
P_RF
P_LO
Tch
Mixer DC gate voltage
V
Gain control voltage
V
Maximum peak input power overdrive
Maximum LO input power
Maximum channel temperature (1)
Operating temperature range
Storage temperature range
dBm
dBm
°C
10
175
Ta
-40 to +85
-55 to +125
°C
Tstg
°C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
Ref. : DSCHR3663-QEG8317 - 12 Nov 08
2/16
Specifications subject to change without notice
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Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
