37-40GHz Integrated Down Converter
CHR3394-QEG
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
VD, VD1
IDt
Parameter
Values
4.5V
Unit
V
Drain bias voltages
Drain bias current
340
mA
V
VGL, VGX Gate bias voltages
-2 to +0.4
+15
P_RF
P_LO
Tj
Maximum peak input power overdrive (2)
Maximum LO input power
dBm
dBm
°C
+15
Junction temperature
175
Ta
Operating temperature range
Storage temperature range
-40 to +85
-55 to +155
°C
Tstg
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) Duration < 1s.
Typical Bias Conditions
Tamb.= +25°C
Symbol
VD1, VD
ID1
Pad No
10, 11
10
Parameter
DC drain voltages (LNA and LO-chain)
LNA drain current controlled with VGL
LNA DC gate voltage
Values
4
Unit
V
125
-0.1
-0.9
mA
V
VGL
9
VGX
12
Multiplier DC gate voltage
V
Ref. : DSCHR3394-QEG1192 - 11 Jul 11
3/14
Specifications subject to change without notice
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Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
