CHR2411-QDG
22-24.5GHz RX Multifunction
Electrical Characteristics
Tamb.= +25°C
Symbol
RF
Parameter
Min
22
Typ
Max
24.5
24.5
1.0
-8
Unit
GHz
GHz
MHz
dB
Frequency range
LO
Frequency range
22
IF
Frequency range
DC
RF
Return Loss
-15
-15
50
LO
Return Loss
-8
dB
IF
IF Load impedance
LO Drive Power
Ω
PLO
Gc
0
5
dBm
dB
Conversion Gain
19
23
27
ΔG(T)
NF
Gain variation over Temperature
SSB Noise figure (IF=1MHz)
Input Power at 1dB Gain Comp. @24GHz
Input IP3 @24GHz
LO to RF Isolation
dB
2.5
7
dB
Pin-1dB
IP3_IN
Iso
-21
-12
-45
5
dBm
dBm
dB
-30
+Vg, +Vd Supply Voltage
V
+I
Supply Current
60
80
mA
°C
Top
Operating temperature range
-40
25
105
These performance has been obtained with the chip in QFN package mounted on the
recommended boards (ref. 95541 & 95581) described in this document. These performances
are highly dependent on this environment.
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
V
+Vg, +Vd Maximum positive supply voltage
6
+I
Maximum positive supply voltage
Maximum peak input power overdrive
Maximum peak input power overdrive
Operating temperature range
90
8
mA
dBm
dBm
°C
PLO
PRF
Top
Tstg
-12
-40 to +105
-55 to +150
Storage temperature range
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
Ref. : CHR2411-QDG3116 - 26 Apr 13
2/10
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
