CHR2299-99F
40-44GHz Down converter
Mechanical data
Chip thickness: 100 µm, units: µm, tol:+/- 35 µm
DC pads = 92x92 µm, RF pads = 178x114 µm
Pin number
Pin name
Description
1
2
RF_IN
DA
RF input
LNA drain voltage
Multiplier & Buffer drain voltage
Multiplier gate voltage
LO buffer gate voltage
Mixer gate voltage
IF outputs
3
DX
4
GX
5
G3
6
GM
7, 8
9
IF_I & IF_Q
4LO_OUT
LO_IN
Output 4xLO frequency
LO input
10
Recommended biasing
Pin Name
GM
Pin Number
Parameter
Nominal value
6
5
4
3
2
Mixer gate voltage
-0.6 V
-0.3 V
-1.2 V
4 V
G3
LO buffer gate voltage
X4 gate voltage
GX
DX
X4 and buffer drain voltage
LNA Drain voltage
DA
4 V
Ref. : DSCHR22992012 - 19 Jan 12
8/12
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
