36-40GHz Down Converter
CHR2296
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd = 3.5V
Symbol
FRF
Parameter
RF frequency range
Min
36
17
DC
9
Typ
Max
40
Unit
GHz
GHz
GHz
dB
FLO
LO frequency range
IF frequency range
Conversion gain (1)
20
FIF
1.5
Gc
11
5
NF
Noise Figure, for IF>0.1GHz (1)
dB
PLO
LO Input power
+10
15
dBm
dBc
dBm
Img Sup Image Suppression
13
P1dB
Input power at 1dB gain compression
-10
2.0:1
LO
VSWR
Input LO VSWR (1)
Input RF VSWR (1)
Bias current (2)
RF
VSWR
3.0:1
110
Id
mA
(1) On Wafer measurements
(2) Current source biasing network is recommended. Optimum performances for Idm =
50mA and Idl = 60mA
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Parameter
Maximum drain bias voltage
Values
4.0
Unit
V
Id
Maximum drain bias current
200
mA
V
Vg
Gate bias voltage
-2.0 to +0.4
-5
Vgd
Pin
Minimum negative gate drain voltage ( Vg – Vd)
Maximum peak input power overdrive (2)
Maximum channel temperature
Operating temperature range
Storage temperature range
V
+15
dBm
°C
°C
°C
Tch
Ta
175
-40 to +85
-55 to +125
Tstg
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) Duration < 1s.
Ref. : DSCHR22961192 - 11 Jul 11
2/6
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
