71-86GHz Down-converter
CHR1080a98F
Recommended assembly plan
50Ω line
LO
I
10nF
To
external
120pF
To Vgg LO
GLO
IF Hybrid
DLO3
Q
To Vdd LO
10nF
120pF
120pF
120pF
120pF
GX
To Vgg
Mixer
10nF
10nF
10nF
DRF
GRF
To Vdd RF
To Vgg RF
RF
160µm gap
75µm
ribbon
The design integrates a half ribbon (75µm wide) connection at the RF and LO input of the
MMIC amplifier compliant with a 50Ohm line on GaAs MMIC.
Circuits having to be as close as possible to each other, the ribbon length must be reduced to
the achievable minimum (160µm gap between two chips is considered) and the loop height
must also be the smallest realizable (80µm).
Ribbon(W75µm,length≈330µm )
Hyper
Hyper
access
access
MMIC
CHR1080
160µm
85µm
A second solution is the use of double wires (Ø 25µm). In this case, a minimum of two wires
and the same chip to chip distance as ribbon solution is necessary to reduce the inductance
effect. Nevertheless, simulations have demonstrated an improvement of RF performance for
E-band frequency range with the use of ribbon connection instead of wire.
Regarding the connection of the DC pads, a 25µm wedge bonding is preferred.
Ref. : DSCHR1080a5093 - 03 Apr 15
9/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
