6-18GHz Phase-shifter
CHP4511
Electrical Characteristics
Low level control voltage = -5V, High level control voltage = 0V
Pin = 5 dBm on the input, output on SPDT 1 or 2
Tamb = +25°C
typ. Max Unit
Parameter
Conditions Min
Fop
Operating frequency range
6
0
18
GHz
deg.
deg
dB
Phrange Phase shifter range
to
360
Phstep
S11
Phase step
22.5
Input reflection coefficient
Output reflection coefficient
-6
-7
S22
dB
-15
Output reflection coefficient path
OFF
S22off
IL
dB
dB
6 to 14GHz
13
15
Insertion loss
15 to 18GHz
ISO
Isolation between Output 1 and 2
Amplitude variation
25
35
-1.5 / +2.5
10
dB
dB
AV
Pio1dB
Poi1dB
Output Power @1dB compression
Output Power @1dB compression
In => out1 or 2
out1 or 2 => in
dBm
dBm
12
Parameter
Conditions
average
std dev
pk to pk
Unit
state 22.5°
state 45°
state 90°
state 180°
22.5° ±5
45° ±5
< 3°
< 6°
< 6°
< 6°
±6° / average
±10° / average
±10° / average
±10° / average
PPE
Peak Phase Error
deg
90° ±5
180° ±10
Peak Phase Error (PPE) definition:
PPE(i) =measured_phase(S21)(i) – measured_phase(S21)(0) – theoretical_phase(i)
(i) = state Î [0,15]
Amplitude variation (AV) definition:
AV(i) = measured_dB(S21)(i) – measured_dB(S21)(0)
(i) = state Î [0,15]
Absolute Maximum Ratings
Tamb = +25°C
Operation of this device above anyone of these paramaters may cause permanent damage.
Symbol
Vgi
Parameter
Values
-7 to +0.6
+30
Unit
V
Phase shifter control voltage
Maximum peak input power overdrive (1)
Operating temperature range
Storage temperature range
Pin
dBm
°C
Top
-40 to +70
-55 to +125
Tstg
°C
(1) duration < 1s.
Ref. : DSCHP45116216 - 04 Aug 06
2/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
