K band Mixer
CHM1191
Electrical Characteristics
Tamb. = 25°C
Symbol
F_LO
Parameter
Min
22
1
Typ
Max
24
Unit
GHz
GHz
dB
LO frequency range
F_IF
IF frequency range
3
Lc
Conversion loss @ P-LO = 7dBm (1)
LO input power
7
7
P_LO
5
9
dBm
dBm
P-1dB
Input 1dB compression
LO port VSWR (50Ω) (2)
RF port VSWR (50Ω) (2)
RF port VSWR (50Ω) (2)
LO/RF isolation
7
VSWR_LO
VSWR_RF
VSWR_IF
I_LO/RF
2.5:1
2.5:1
2.5:1
30
dBc
(1) On wafer measurements.
(2) Depends on the wire bonding conditions and on the external matching network.
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
P_LO
P_RF
P_IF
Parameter
Values
Unit
dBm
dBm
dBm
°C
Maximum peak input power overdrive at LO port (2)
Maximum peak input power overdrive at RF port (2)
Maximum peak input power overdrive at IF port (2)
Operating temperature range
10
10
10
Top
-40 to +85
-55 to +125
Tstg
Storage temperature range
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s
Ref. : DSCHM11919025
Specifications subject to change without notice
2/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
