X-band High Power Amplifier
CHA7114
Electrical Characteristics
Tamb = 25°C, Vd = 8V, Id (Quiescent) = 2A, Pulse wi dth = 25µs, Duty cycle=10%
Symbol
Fop
Parameter
Operating frequency
Min
8.5
Typ
Max
11.5
23
Unit
GHz
dB
G
Small signal gain
17.5
20
G_T
Small signal gain variation versus
temperature
-0.033
dB/°C
RLin
RLout
Psat
Input Return Loss
8
6
10
8
dB
dB
Output Return Loss
Saturated output power
39.8
-0.008
dBm
dB/°C
Psat_T
Saturated output power variation
versus temperature
P_4dBcp
PAE_4dBcp
Id
Output power @ 4dBcp (2)
Power Added Efficiency @ 4dBcp
Supply drain current
38
36
39
42
dBm
%
A
2.3
8.0
2.0
-4.0
2.6
8.5
Vd1, Vd2
Id_q
Drain supply voltage (2)
V
Supply quiescent drain current (1)
Gate Power supply voltage
Operating temperature range
A
Vg1, Vg2
Top
V
-40
+80
°C
(1) Parameter to be adjusted by tuning of Vg
(2) 0.5V variation on Vd leads to around 0.4dB variation of the output power (impact on
robustness see Maximum ratings)
Absolute Maximum Ratings (1)
Tamb = 25°C
Symbol
Cmp
Vd
Parameter
Compression level (2)
Values
Unit
dB
V
6
Drain Power supply voltage (3)
Drain Power supply quiescent current
Drain Power supply current in saturation
Gate Power supply voltage
10
Id
2.5
A
Id_sat
Vg
3
-8
A
V
Tj
Maximum junction temperature (4)
Storage temperature range
175
°C
°C
Tstg
-55 to +125
(1)
(2)
Operation of this device above anyone of these parameters may cause permanent
damage.
For higher compression the level limit can be increased by decreasing the voltage
Vd using the rate 0.5V/dBcp
(3)
(4)
Without RF input power
Equivalent Thermal Resistance to Backside: 5.6°C/W for backside temp. of 80°C.
[ Junction Temperature comes from: Tj = Tbackside + ETRB x (Dissipated Power)
Where ETRB stands for Equivalent Thermal Resistance to Backside. ]
Ref. : DSCHA7114-0197 - 16 Jul 10
2/8
Specifications subject to change without notice
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Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
