X-band High Power Amplifier
CHA6517
Electrical Characteristics
Tamb = 25°C (2), Vd=8V, Id (Quiescient) = 0.6A, Pu lsed biasing mode, each channel
Symbol
F_op
G_lin
RL_in
RL_out
Psat
Parameter
Operating frequency
Min
6
Typ
Max
Unit
GHz
dB
dB
dB
dBm
%
18
Linear gain (Pin=-5dBm)
19
22
-14
-8
Input Return Loss
-8
-4
Output Return Loss
Saturated output power (Pin=11dBm)
Power Added Efficiency in saturation
Positive supply voltage
30
32
15
8
PAE_sat
Vd
V
Id
Power supply quiescent current (1)
Negative supply voltage
0.6
-0.4
A
Vg
V
Top
Operating temperature range (2)
-40
+70
°C
(1) This parameter is fixed by gate voltage Vg
(2) The reference is the back-side of the chip
Absolute Maximum Ratings (1)
Symbol
Pin (2)
Vd (2)
Id (2)
Pd (2)
Tj
Parameter
Values
Unit
Maximum Input power
19
8.5
dBm
V
Positive supply voltage without RF power
Positive supply quiescent current
Power dissipation
1
A
13.5
W
°C
Junction temperature
175
Tstg
Storage temperature range
-55 to +125
°C
(1)
(2)
Operation of this device above anyone of these parameters may cause permanent damage.
These values are specified for Tamb = 25°C
Ref. : DSCHA6517-8205 - 25 Jun 08
2/10
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
