CHA6358-99F
27-31.5GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA6358-99F is a three stages
monolithic HPA that typically provides an
output power of 31dBm at 1dB gain
compression associated to a high IP3 output
of 38.5dBm.
It is designed for a wide range of
applications, from professional to commercial
communication systems
The circuit is manufactured with a pHEMT
process, 0.15µm gate length.
It is available in chip form.
Vg1a
Vd1a Vg2a
Vd2a
Vg3a Vd3a
RF in
RF out
Vg1b Vd1b Vg2b
Vd2b
Vg3b Vd3b
Main Features
Output power (dBm)
■ Broadband performances: 27-31.5GHz
■ Pout: 31dBm at 1dB compression
■ OIP3: 38.5dBm
■ Linear gain: 22dB
■ DC bias: Vd=6.0Volt@Id=750mA
■ Chip size: 2.5x2.5x0.1mm
36
34
32
30
28
50
40
30
20
10
P-1dB
26
Psat
29
PAE at 1dB
0
27
28
30
31
32
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq
Frequency range
Gain
Linear Gain
OIP3
Output third order interception point
Pout
Output Power @1dB comp.
Min
27.0
Typ
22
38.5
31
Max
31.5
Unit
GHz
dB
dBm
dBm
Ref. : DSCHA63583058 - 27 Feb 13
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
PAE (%)
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
