8-12GHz Driver Amplifier
CHA6105
Electrical Characteristics
Vd = +8V, Pulse 25µs 10%
Symbol
Top
Parameter
Min
-40
8
Typ
Max
85
Unit
°C
Operating temperature range
Operating frequency range
Fop
12
GHz
dB
G
Small signal gain at 25°C
25.5
30
-0.03 5
30.5
31
34
Linear gain variation vs temperature at 25°C
Output power at 1dB gain compression at 25°C
Output power at 3dB gain compression at 25°C
Output power at saturation
Input Return Loss
dB/°C
dBm
dBm
dBm
dB
∆G_T
P1dB
P3dB
Psat
dBS11
dBS22
Vd
29.5
31.5
2:1
Output Return Loss
2:1
dB
Power supply voltage
8
V
Idq
Power supply quiescent current
700
mA
Id_3dBc Consumption under 3dB gain compression
925
-5
1150
mA
V
V_c
I_c
Drain current control voltage
Biasing circuit consumption
25
mA
Absolute Maximum Ratings (1)
Tamb = 20°C
Symbol
Pin_max
Cmp
Parameter
Values
Unit
dBm
dB
Maximum RF input power
Compression level
13
13
9
Vd
Power supply voltage
V
<Id>
maximum value of CW power supply current
Drain current control voltage
850
-6
mA
V
V_c
Tj
Maximum Junction temperature
Storage temperature range
175
°C
°C
Tstg
-55 to +125
(1) Operation of this device above anyone of these parameters may cause permanent damage
Ref. : DSCHA61050106 - 16 Apr 10
2/8
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
