24-30GHz Medium Power Amplifier
CHA5390
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd1,2,3,4 = 5V Id=460mA
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range
24
30
GHz
G
∆G
Small signal gain (1)
21 (2)
24 (2)
±2
dB
dB
Small signal gain flatness (1)
Reverse isolation
Is
50
dB
P1dB
IP3
PAE
Pulsed output power at 1dB compression (1)
3rd order intercept point
24
25
dBm
dBm
%
33
Power added efficiency at saturation
16
VSWRin Input VSWR
3.0:1
3.0:1
720
VSWRout Output VSWR
Id
Bias current
460
mA
(1) On Wafer measurements
(2) [26-29 GHz]: 24dB min [24-31 GHz]: 21dB min
For Tj<175°C ( 80°C ambient ), Id should be below 475mA under 5V bias.
Current source biasing network is recommended.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Parameter
Values
6.0
Unit
V
Drain bias voltage
Drain bias current
Gate bias voltage
Id
720
mA
V
Vg
-2.0 to +0.4
+15
Pin
Maximum peak input power overdrive (2)
Operating temperature range
dBm
°C
Ta
-40 to +85
-55 to +155
Tstg
Storage temperature range
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : CHA53901012 - 12-Jan.-01
2/6
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
