17.7-23.6GHz Packaged HPA
CHA5356-QGG
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Vd
Parameter
Values
6.5V
Unit
V
Drain bias voltage
Id
Drain bias quiescent current
Gate bias voltage
Maximum peak input power overdrive (2)
Junction temperature
900
mA
V
Vg
-2 to +0.4
+20
Pin
Tj
dBm
°C
175
Ta
Operating temperature range
Storage temperature range
-40 to +85
-55 to +150
°C
Tstg
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) Duration < 1s.
Typical Bias Conditions
Tamb.= +25°C
Symbol
Vd1
Pad No
28
Parameter
DC Drain voltage 1st stage
DC Drain voltage 2nd stage
DC Drain voltage 3rd stage
DC Gate voltage 1st stage
DC Gate voltage 2nd stage
DC Gate voltage 3rd stage
DC Detector voltage
Values
6.0
Unit
V
Vd2
26
6.0
V
Vd3
24, 12
9
6.0
V
Vg1
-0.75
-0.75
-0.75
6.0
V
Vg2
10
V
Vg3
25, 11
22
V
VDC
V
Ref. : DSCHA5356-QGG4273- 30 Sep 14
3/16
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
