37-40GHz Medium Power Amplifier
CHA5292a
Electrical Characteristics
Tamb = +25°C, Vd = 3.5V Id =500mA
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range (1)
37
40
GHz
G
∆G
Small signal gain (1)
24
±1
dB
dB
Small signal gain flatness (1)
Reverse isolation
Is
35
dB
P1dB
P03
Pulsed output power at 1dB compression (1)
Output power at 3dB gain compression (1)
24
dBm
dBm
26
VSWRin Input VSWR (2)
VSWRout Output VSWR (2)
3:1
3.5:1
160
500
Tj
Id
Junction temperature for 80°C backside
Bias current @ small signal
°C
650
mA
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports.
(2) Value representative for CW on jig measurement.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Parameter
Maximum Drain bias voltage with Pin max=0dBm
Drain bias current
Values
+4.0
Unit
V
Id
750
mA
V
Vg
Gate bias voltage
-2 to +0.4
-1.8 to +1.8
+6.0
Ig
Gate bias current
mA
V
Vdg
Pin
Maximum drain to gate voltage (Vd - Vg)
Maximum input power overdrive (2)
Maximum channel temperature
Operating temperature range
Storage temperature range
+3.0
dBm
°C
Tch
Ta
+175
-40 to +80
-55 to +125
°C
Tstg
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA52922149 - 29-May-02
2/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
