CHA5266-QDG
10-16 GHz Medium Power Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd = +5.0V
Symbol
Freq
Gain
RL_in
RL_out
P1dB
Psat
Parameter
Min
Typ
Max
Unit
GHz
dB
Frequency range
Linear Gain
10
16
23
9
Input Return Loss
Output Return Loss
Output power @ 1dB compression
Saturated output power
Output IP3
dB
20
dB
25.5
27
dBm
dBm
dBm
dB
OIP3
NF
35
Noise Figure
6
Idq
Quiescent Drain current
Gate Voltage
320
-0.35
mA
V
Vg
These values are representative of onboard measurements as defined on the drawing in
paragraph "Evaluation mother board".
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Vd
Parameter
Values
6.5V
Unit
V
Drain bias voltage
Drain bias current
Gate bias voltage
Idq
0.45
A
Vg
-2 to 0
20
V
Pin
Input continuous power
Junction temperature
dBm
°C
°C
°C
Tj
175
Ta
Operating temperature range
Storage temperature range
-40 to +85
-55 to +150
Tstg
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
Typical Bias Conditions
Tamb.= +25°C
Symbol
VD1
Pad No
23
Parameter
DC Drain voltage 1st stage
DC Drain voltage 2nd stage
DC Drain voltage 3rd stage
DC Gate voltage 1st stage
DC Gate voltage 2nd stage
DC Gate voltage 3rd stage
Values
5
Unit
V
VD2
21
5
V
VD3
19
5
V
VG1
8
-0.35
-0.35
-0.35
V
VG2
10
V
VG3
12
V
Ref. : DSCHA5266-QDG3233 - 21 Aug 13
2/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
