CHA5250-QDG
5.5-9GHz Medium Power Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd = +7.0V
Symbol
Freq
Gain
RL_in
RL_out
OP1dB
Psat
Parameter
Min
Typ
Max
Unit
GHz
dB
Frequency range
5.5
9
Linear Gain
26
-12
-10
28
Input Return Loss
dB
Output Return Loss
Output power @1dB compression
Saturated output power
Output IP3
dB
dBm
dBm
dBm
%
30
OIP3
PAE
36
Power Added Efficiency @ 1dB compression
Noise figure
30
NF
7
dB
Idq
Quiescent Drain current
Gate voltage
280
-0.45
mA
V
Vg
These values are representative of onboard measurements as defined on the drawing in
paragraph "Evaluation mother board".
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Vd
Parameter
Values
7.5V
Unit
V
Drain bias voltage
Idq
Drain bias quiescent current
Gate bias voltage
0.4
A
Vg
-2 to +0
8
V
Pin
Input continuous power
Junction temperature
dBm
°C
°C
°C
Tj
175
Ta
Operating temperature range
Storage temperature range
-40 to +85
-55 to +150
Tstg
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
Typical Bias Conditions
Tamb.= +25°C
Symbol
VD1
Pad No
Parameter
DC Drain voltage 1st stage
Values
Unit
V
12
9
7
7
VD2
DC Drain voltage 2nd stage
DC Drain voltage 3rd stage
DC Gate voltage tuned for Idq= 280mA
V
VD3
7
7
V
VG
22
-0.45
V
Ref. : DSCHA5250-QDG-Full-2355 - 20 Dec 12
2/16
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
