5.8GHz Medium Power Amplifier
CHA5215a
Electrical Characteristics
Tamb = +25°C
Test
Conditions
Symbol
Parameter
Min.
Typ.
Max
Unit
Fop
Glin
Gdr
Gc
Operating frequency range
Linear gain (Gc=-5V)
5
5.8
25
15
7
GHz
dB
Gain control dynamic range
Gain control voltage
10
-5
dB
0
V
Pout
Sdet
Vref
RLin
RLout
Vd
Saturated output power
Output power monitor sensitivity
Reference monitor voltage
Input return loss (full band) (2)
Output return loss (2)
27
-5
dBm
mV/mW
mV
dB
550
12
6
7
dB
Positive supply voltage (1)
Positive supply current
9
V
Id
330
-1.4
400
15
mA
V
Vg
Negative supply voltage
Negative supply current
Ig
mA
(1) Depending on the application a trade-off can be obtained between linearity and power
consumption by adjusting the positive supply voltage (from 6 to 9V).
(2) The return loss can be improved by using a simple matching network (available on request).
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Vd
Parameter
Positive supply voltage
Values
10
Unit
V
Vg
Negative supply voltage
-6 to 0 (3)
-6 to 0.6
20
V
Gc
Gain control voltage
Pin
Maximum peak input power overdrive (2)
Operating temperature range
Storage temperature range
dBm
°C
Top
Tstg
-50 to +70
-55 to +155
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage
(2) Duration < 1s
(3) Choose Vg in order to have Id ≤ 400mA when Vd is applied
Ref. : DSCHA52150160 -08-Jun-00
2/12
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
