24-26GHz High Power Amplifier
CHA5093TCF
Schematic
CHA5093TCF
Vd1,2
Vd3
RF IN
RF OUT
Vg1,2,3
Vd3
Typical Bias Conditions
for an ambient Temperature of +25°C
Symbol
Vd1,2,3
Vg1,2,3
Idd
Pin No.
2, 4 & 8 Drain bias voltage
Parameter
Values Unit
6
V
V
10
First, second & third stages gate bias voltage
Total drain current
-0.4
600
2,4 & 8
mA
All other pins are not used for this device.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vds
Ids
Parameter
Drain bias voltage_small signal
Drain bias current_small signal
Gate bias voltage
Values
6.0
Unit
V
mA
V
1200
Vgs
Vdg
Pin
-2 to +0.4
+8
Negative Drain Gate voltage (= Vds – Vgs)
Maximum peak input power overdrive (3)
Operating temperature range (4)
Storage temperature range
V
+12
dBm
°C
°C
Ta
-40 to +70
-55 to +155
Tstg
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) 6V recommended for up to a max of 1dB gain compression.
(3) Duration < 1s.
(4) Upper temperature limit strongly dependent on motherboard design; ratings given for
ideal thermal coupling
Ref. : DSCHA50932035 - 04-Feb.-02
2/6
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
