22-26GHz High Power Amplifier
CHA5093
Chip Assembly and Mechanical Data
To Vg1,2,3 DC Gate supply feed
1nF
To Vd3 DC Drain supply feed
100pF
100pF
Out
In
100pF
100pF
To Vd1,2 DC Drain supply feed To Vd3 DC Drain supply feed
Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is to be prefered.
Bonding pad positions.
( Chip thickness : 100µm. All dimensions are in micrometers )
Ref. : DSCHA50930129 -09 May-00
6/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
