CHA4253aQQG
17- 24GHz Medium Power Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd = +4.0V
Symbol
Freq
Gain
ΔG
Parameter
Min
Typ
Max
Unit
GHz
dB
Frequency range
17.0
24.0
Linear Gain
23
0.04
33
Gain variation in temperature
3rd order Intercept point
Output power @ 1dB compression
Saturated Output Power
Input Return Loss
dB/°C
dBm
dBm
dBm
dB
OTOI
P-1dB
Psat
RLin
RLout
NF
24
24.5
12
Output Return Loss
Noise figure
15
dB
7.5
230
-0.7
dB
Id
Quiescent Drain current
Gate voltage
mA
Vg
V
These values are representative of onboard measurements as defined on the drawing in
paragraph "Evaluation mother board".
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Vd
Parameter
Values
6V
Unit
V
Drain bias voltage
Id
Drain bias quiescent current
Gate bias voltage
300
mA
V
Vg
-2 to +0.4
10
Pin
Tj
Maximum input power
dBm
°C
Junction temperature (2)
Operating temperature range
Storage temperature range
175
Ta
-40 to +85
-55 to +150
°C
Tstg
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) Duration < 1s.
Typical Bias Conditions
Tamb.= +25°C
Symbol
Vd12
Pad No
Parameter
DC Drain voltage 1st, 2nd stage
DC Drain voltage 3rd, 4th stage
DC Gate voltage 1st & 2nd stage
DC Gate voltage 3rd & 4th stage
Values
4
Unit
V
6
7
Vd34
4
V
Vg12
16
14
-0.7
-0.7
V
Vg34
V
Ref. : DSCHA4253aQQG4346 - 12 Dec 14
2/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
