CHA4220-98F
0.5-20GHz Driver
Electrical Characteristics
Tamb.= +25°C,Vg1 to be set in order to have Idq=120 mA, Vg2=1.5V
Symbol
Freq
Gain
NF
Parameter
Min
Typ
Max
Unit
GHz
dB
Frequency range
Linear Gain
0.5
20
17
3.5
15
18
Noise Figure
dB
IRL
Input Return Loss
dB
ORL
P1dB
Output Return Loss
dB
Output power for 1dB Compression
For Freq=2-20 GHz
20
23
dBm
dBm
Psat
Saturated output power
For Freq=2-20 GHz
OIP3
Output Third Order Intercept
For Freq=2-20 GHz
28
120
6.5
140
dBm
mA
V
Idq
Vd
Id
Quiescent current on Vd
Supply voltage on Vd
6
7
Drain current @3dB gain compression
mA
Pin_max Maximum input power
For Vd=6V
17
15
dBm
dBm
For Vd=7V
The values are representative of typical “test fixture” measurements as defined on the
drawing in paragraph “Evaluation test fixture”.
Typical Bias Conditions
Tamb.= +25°C
Symbol
Vg1
Pad No
Parameter
Gate control1 for the amplifier
Gate control2 for the amplifier
Drain Voltage
Values
-0.2/-0.4
1.5
Unit
V
8
2
5
Vg2
V
Vd
7
V
The associated drain current with no RF input power is Idq=120mA
This typical bias is recommended in order to get the best compromise between output power,
linearity and Noise Figure performance vs. Temperature.
Ref. : DSCHA42203347 - 13 Dec 13
2/18
Specifications subject to change without notice
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Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
