CHA4107-QDG
C-band Medium Power Amplifier
Electrical Characteristics
Tamb = +25°C,
Vd = 8V, Id (Quiescent) = 120mA, Drain Pulse width = 50µs, Duty cycle = 10%
Symbol
Fop
Parameter
Operating frequency
Min
Typ
Max
Unit
GHz
dB
4.5
6.5
22.5
14
G
Small signal gain
8
8
dB
RLin
Input Return Loss
10
dB
RLout
P-1dB
Output Return Loss
25.5
30
dBm
%
Output power @ 1dBcomp
Power Added Efficiency @ 1dBcomp
Supply drain current @ 1dBcomp
Output power @ 3dBcomp
Power Added Efficiency @ 3dBcomp
Supply drain current @ 3dBcomp
Drain supply voltage
PAE_ P-1dB
Id_ P-1dB
P-3dB
145
26
mA
dBm
%
36
PAE_ P-3dB
Id_ P-3dB
Vd1, Vd2
Id
160
8
mA
V
Supply quiescent current (1)
120
-0.8
mA
V
Vg
Gate supply voltage
(1) Parameter can be adjusted by tuning of Vg.
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Cmp
Vd
Parameter
Values
Unit
Compression level (2)
6
dB
V
Supply voltage (3)
9.5
170
200
Id
Supply quiescent current
Supply current in saturation
Supply voltage
mA
mA
V
Id_sat
Vg
[-3.0; -0.4]
175
Tj
Maximum junction temperature
Storage temperature range
Operating temperature range
°C
°C
°C
Tstg
Top
-55 to +150
-40 to +85
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) For higher compression the level limit can be increased by decreasing the voltage Vd
using the rate 0.5V/dB of gain compression.
(3) Without RF input power.
Ref. : DSCHA4107-QDG4188 - 07 Jul 14
2/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
