36-40GHz High Power Amplifier
CHA4094
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd1,2,3 = 3.5Volts
Symbol
Fop
G
Parameter
Operating frequency range (1)
Small signal gain (1) (2)
Min
36
7
Typ
Max
Unit
GHz
dB
40
9
Small signal gain flatness (1) (2)
Reverse isolation (1)
dB
∆G
± 1
30
22
Is
dB
P1db
Pulsed Output power at 1dB gain compression (1)
dBm
VSWRin Input VSWR (1)
VSWRout Output VSWR (1)
2.0:1
2.0:1
920
Id
Bias current (3)
750
mA
(1) These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports. In the case of a jig or a module CW mode operation, the typical output
power may be around 2dB less.
(2) Vd1, 2, 3 = 2Volts
(3) Depends on Biasing point, see application note for recommended biasing point
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Parameter
Values
4
Unit
V
Drain bias voltage
Drain bias current
Gate bias voltage
Id
1200
mA
V
Vg
-2 to +0.4
-40 to +85
-55 to +155
Ta
Operating temperature range
Storage temperature range
°C
°C
Tstg
(1)
Operation of this device above anyone of these parameters may cause permanent damage.
Ref. : DSCHA40949349 – 15 Dec. 99
2/4
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
